A novel charge-based intrinsic capacitance model of short-channel MOSFETs is proposed. Two-dimensional field-induced mobility degradation, velocity saturation, and short-channel effects are included in the model. The simulation results clearly show the importance of the field-induced effects. The method can be used to link a device simulator and a circuit simulator for accurate timing calculation in both digital and analog MOS circuits.
|Number of pages||4|
|Journal||Proceedings of the Custom Integrated Circuits Conference|
|State||Published - 16 May 1988|