Accurate two-dimensional intrinsic capacitance model of short channel MOSFETs.

Steve S. Chung*

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

A novel charge-based intrinsic capacitance model of short-channel MOSFETs is proposed. Two-dimensional field-induced mobility degradation, velocity saturation, and short-channel effects are included in the model. The simulation results clearly show the importance of the field-induced effects. The method can be used to link a device simulator and a circuit simulator for accurate timing calculation in both digital and analog MOS circuits.

Original languageEnglish
Pages (from-to)13.2.1-13.2.4
Number of pages4
JournalProceedings of the Custom Integrated Circuits Conference
DOIs
StatePublished - 16 May 1988

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