Accurate Non-Quasistatic MOSFET model for simulation of RF and high speed circuits

Xiaodong Jin*, Kanyu Cao, Jia Jiunn Ou, Weidong Liu, Yuhua Cheng, Mishel Matloubian, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations

Abstract

An accurate Non-Quasistatic SPICE model based on relaxation time is proposed for ac and transient simulation of high speed and radio frequency (RF) circuits. A method for extracting the relaxation time is also provided. Its dependence on Vgs and Vds and channel length is based on physics and built in the model. Finally the model is verified with both 2D simulation and measurement.

Original languageEnglish
Pages (from-to)196-197
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
StatePublished - 1 Jan 2000
Event2000 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 13 Jun 200015 Jun 2000

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