Accurate Non-Quasistatic MOSFET model for simulation of RF and high speed circuits

Xiaodong Jin; Kanyu Cao; Jia Jiunn Ou; Weidong Liu; Yuhua Cheng; Mishel Matloubian; Chen-Ming Hu

doi:10.1109/VLSIT.2000.852823

Accurate Non-Quasistatic MOSFET model for simulation of RF and high speed circuits

Xiaodong Jin^*, Kanyu Cao, Jia Jiunn Ou, Weidong Liu, Yuhua Cheng, Mishel Matloubian, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

An accurate Non-Quasistatic SPICE model based on relaxation time is proposed for ac and transient simulation of high speed and radio frequency (RF) circuits. A method for extracting the relaxation time is also provided. Its dependence on Vgs and Vds and channel length is based on physics and built in the model. Finally the model is verified with both 2D simulation and measurement.

Original language	English
Pages (from-to)	196-197
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
DOIs	https://doi.org/10.1109/VLSIT.2000.852823
State	Published - 1 Jan 2000
Event	2000 Symposium on VLSI Technology - Honolulu, HI, USA Duration: 13 Jun 2000 → 15 Jun 2000

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10.1109/VLSIT.2000.852823

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title = "Accurate Non-Quasistatic MOSFET model for simulation of RF and high speed circuits",

abstract = "An accurate Non-Quasistatic SPICE model based on relaxation time is proposed for ac and transient simulation of high speed and radio frequency (RF) circuits. A method for extracting the relaxation time is also provided. Its dependence on Vgs and Vds and channel length is based on physics and built in the model. Finally the model is verified with both 2D simulation and measurement.",

author = "Xiaodong Jin and Kanyu Cao and Ou, {Jia Jiunn} and Weidong Liu and Yuhua Cheng and Mishel Matloubian and Chen-Ming Hu",

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doi = "10.1109/VLSIT.2000.852823",

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journal = "Digest of Technical Papers - Symposium on VLSI Technology",

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T1 - Accurate Non-Quasistatic MOSFET model for simulation of RF and high speed circuits

AU - Jin, Xiaodong

AU - Cao, Kanyu

AU - Ou, Jia Jiunn

AU - Liu, Weidong

AU - Cheng, Yuhua

AU - Matloubian, Mishel

AU - Hu, Chen-Ming

PY - 2000/1/1

Y1 - 2000/1/1

N2 - An accurate Non-Quasistatic SPICE model based on relaxation time is proposed for ac and transient simulation of high speed and radio frequency (RF) circuits. A method for extracting the relaxation time is also provided. Its dependence on Vgs and Vds and channel length is based on physics and built in the model. Finally the model is verified with both 2D simulation and measurement.

AB - An accurate Non-Quasistatic SPICE model based on relaxation time is proposed for ac and transient simulation of high speed and radio frequency (RF) circuits. A method for extracting the relaxation time is also provided. Its dependence on Vgs and Vds and channel length is based on physics and built in the model. Finally the model is verified with both 2D simulation and measurement.

UR - http://www.scopus.com/inward/record.url?scp=0033697178&partnerID=8YFLogxK

U2 - 10.1109/VLSIT.2000.852823

DO - 10.1109/VLSIT.2000.852823

M3 - Conference article

AN - SCOPUS:0033697178

SP - 196

EP - 197

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

SN - 0743-1562

Y2 - 13 June 2000 through 15 June 2000

ER -