Accurate determination of P+ silicon layer thickness for microstructures

Kow-Ming Chang; G. J. Hwang; Y. L. Hsien; Ch H. Chen

Accurate determination of P⁺ silicon layer thickness for microstructures

Kow-Ming Chang^*, G. J. Hwang, Y. L. Hsien, Ch H. Chen

^*Corresponding author for this work

National Chiao Tung University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The thickness of a heavily boron-doped layer with doping density over 8 × 10¹⁹ cm^-3 was determined experimentally by calculating the height of the boron etch-stop layer of silicon after completion of silicon backside etching in KOH. P⁺ layers with thickness from 2 μm to 5 μm were fabricated on the silicon wafers by solid boron nitride source diffusion at 1125°C for 1 to 6 hours. The measured results of layer thickness show a strong agreement with the theoretical calculations based on a universal profile of the heavily boron-doped layer.

Original language	English
Pages (from-to)	107-111
Number of pages	5
Journal	Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an
Volume	5
Issue number	2
State	Published - 1 May 1998

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title = "Accurate determination of P+ silicon layer thickness for microstructures",

abstract = "The thickness of a heavily boron-doped layer with doping density over 8 × 1019 cm-3 was determined experimentally by calculating the height of the boron etch-stop layer of silicon after completion of silicon backside etching in KOH. P+ layers with thickness from 2 μm to 5 μm were fabricated on the silicon wafers by solid boron nitride source diffusion at 1125°C for 1 to 6 hours. The measured results of layer thickness show a strong agreement with the theoretical calculations based on a universal profile of the heavily boron-doped layer.",

author = "Kow-Ming Chang and Hwang, {G. J.} and Hsien, {Y. L.} and Chen, {Ch H.}",

year = "1998",

month = may,

day = "1",

language = "English",

volume = "5",

pages = "107--111",

journal = "International Journal of Electrical Engineering",

issn = "1812-3031",

publisher = "Chinese Institute of Electrical Engineering",

number = "2",

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Accurate determination of P⁺ silicon layer thickness for microstructures. / Chang, Kow-Ming; Hwang, G. J.; Hsien, Y. L.; Chen, Ch H.

In: Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an, Vol. 5, No. 2, 01.05.1998, p. 107-111.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Accurate determination of P+ silicon layer thickness for microstructures

AU - Chang, Kow-Ming

AU - Hwang, G. J.

AU - Hsien, Y. L.

AU - Chen, Ch H.

PY - 1998/5/1

Y1 - 1998/5/1

N2 - The thickness of a heavily boron-doped layer with doping density over 8 × 1019 cm-3 was determined experimentally by calculating the height of the boron etch-stop layer of silicon after completion of silicon backside etching in KOH. P+ layers with thickness from 2 μm to 5 μm were fabricated on the silicon wafers by solid boron nitride source diffusion at 1125°C for 1 to 6 hours. The measured results of layer thickness show a strong agreement with the theoretical calculations based on a universal profile of the heavily boron-doped layer.

AB - The thickness of a heavily boron-doped layer with doping density over 8 × 1019 cm-3 was determined experimentally by calculating the height of the boron etch-stop layer of silicon after completion of silicon backside etching in KOH. P+ layers with thickness from 2 μm to 5 μm were fabricated on the silicon wafers by solid boron nitride source diffusion at 1125°C for 1 to 6 hours. The measured results of layer thickness show a strong agreement with the theoretical calculations based on a universal profile of the heavily boron-doped layer.

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M3 - Article

AN - SCOPUS:0032075646

VL - 5

SP - 107

EP - 111

JO - International Journal of Electrical Engineering

JF - International Journal of Electrical Engineering

SN - 1812-3031

IS - 2

ER -