Accurate determination of P+ silicon layer thickness for microstructures

Kow-Ming Chang*, G. J. Hwang, Y. L. Hsien, Ch H. Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

The thickness of a heavily boron-doped layer with doping density over 8 × 1019 cm-3 was determined experimentally by calculating the height of the boron etch-stop layer of silicon after completion of silicon backside etching in KOH. P+ layers with thickness from 2 μm to 5 μm were fabricated on the silicon wafers by solid boron nitride source diffusion at 1125°C for 1 to 6 hours. The measured results of layer thickness show a strong agreement with the theoretical calculations based on a universal profile of the heavily boron-doped layer.

Original languageEnglish
Pages (from-to)107-111
Number of pages5
JournalJournal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an
Volume5
Issue number2
StatePublished - 1 May 1998

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