Abstract
The thickness of a heavily boron-doped layer with doping density over 8 × 1019 cm-3 was determined experimentally by calculating the height of the boron etch-stop layer of silicon after completion of silicon backside etching in KOH. P+ layers with thickness from 2 μm to 5 μm were fabricated on the silicon wafers by solid boron nitride source diffusion at 1125°C for 1 to 6 hours. The measured results of layer thickness show a strong agreement with the theoretical calculations based on a universal profile of the heavily boron-doped layer.
| Original language | English |
|---|---|
| Pages (from-to) | 107-111 |
| Number of pages | 5 |
| Journal | Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an |
| Volume | 5 |
| Issue number | 2 |
| State | Published - 1 May 1998 |
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Chang, K-M., Hwang, G. J., Hsien, Y. L., & Chen, C. H. (1998). Accurate determination of P+ silicon layer thickness for microstructures. Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an, 5(2), 107-111.