Accurate and Computationally Efficient Modeling of Nonquasi Static Effects in MOSFETs for Millimeter-Wave Applications

Chetan Gupta*, Noor Mohamed, Harshit Agarwal, Ravi Goel, Chen-Ming Hu, Yogesh Singh Chauhan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

A lumped-circuit nonquasi-static (NQS) model, that is applicable for both large-signal transient simulations and a small-signal ac analysis, is developed in this paper. An improved physical equivalent circuit, capturing NQS effects in the millimeter waveband, is derived using a transmission line model, by incorporating the high-frequency longitudinal gate electrode and a channel distributed RC network. The proposed model is implemented in a BSIM-BULK MOSFET model and validated with dc and RF data, obtained from technology computer-aided design device simulations and experimental data. The proposed model is in very good agreement with the data up to {50}{f}-{t}. The transient currents, for a gate-voltage switching rate of {5}\times {10}^{{10}} V/s, show excellent match with the data. The dc, transient, and ac simulations using the proposed model are much faster than a 10-segmented MOSFET model. This shows that the proposed model is better than other computationally complex compact models, for most RF applications.

Original languageEnglish
Article number8423438
Pages (from-to)44-51
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume66
Issue number1
DOIs
StatePublished - 1 Jan 2019

Keywords

  • BSIM-BULK
  • MOSFET
  • NQS effects
  • RF model
  • THz
  • ft
  • millimeter
  • segmentation

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