It is shown that oxide lifetime extrapolation using a log(t//B//D) or log(Q//B//D) against 1/E//o//x plot, where log(t//B//D) and log (Q//B//D) are the time and charge to breakdown respectively, is accurate and has a sound theoretical basis. The completion of a highly accelerated oxide test in seconds appears to be feasible. The acceleration factor is also a function of the severity of the oxide defect. Extrapolation of defect-related breakdown lifetime can be performed assuming an effective oxide thinning for defects.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 1 Dec 1987|