ACCELERATED TESTING OF SILICON DIOXIDE WEAROUT.

I. C. Chen; J. Lee; Chen-Ming Hu

ACCELERATED TESTING OF SILICON DIOXIDE WEAROUT.

I. C. Chen^*, J. Lee, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article

5 Scopus citations

Abstract

It is shown that oxide lifetime extrapolation using a log(t//B//D) or log(Q//B//D) against 1/E//o//x plot, where log(t//B//D) and log (Q//B//D) are the time and charge to breakdown respectively, is accurate and has a sound theoretical basis. The completion of a highly accelerated oxide test in seconds appears to be feasible. The acceleration factor is also a function of the severity of the oxide defect. Extrapolation of defect-related breakdown lifetime can be performed assuming an effective oxide thinning for defects.

Original language	English
Pages (from-to)	23-24
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
State	Published - 1 Dec 1987

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Chen, I. C., Lee, J., & Hu, C-M. (1987). ACCELERATED TESTING OF SILICON DIOXIDE WEAROUT. Digest of Technical Papers - Symposium on VLSI Technology, 23-24.

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title = "ACCELERATED TESTING OF SILICON DIOXIDE WEAROUT.",

abstract = "It is shown that oxide lifetime extrapolation using a log(t//B//D) or log(Q//B//D) against 1/E//o//x plot, where log(t//B//D) and log (Q//B//D) are the time and charge to breakdown respectively, is accurate and has a sound theoretical basis. The completion of a highly accelerated oxide test in seconds appears to be feasible. The acceleration factor is also a function of the severity of the oxide defect. Extrapolation of defect-related breakdown lifetime can be performed assuming an effective oxide thinning for defects.",

author = "Chen, {I. C.} and J. Lee and Chen-Ming Hu",

year = "1987",

month = dec,

day = "1",

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journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - ACCELERATED TESTING OF SILICON DIOXIDE WEAROUT.

AU - Chen, I. C.

AU - Lee, J.

AU - Hu, Chen-Ming

PY - 1987/12/1

Y1 - 1987/12/1

N2 - It is shown that oxide lifetime extrapolation using a log(t//B//D) or log(Q//B//D) against 1/E//o//x plot, where log(t//B//D) and log (Q//B//D) are the time and charge to breakdown respectively, is accurate and has a sound theoretical basis. The completion of a highly accelerated oxide test in seconds appears to be feasible. The acceleration factor is also a function of the severity of the oxide defect. Extrapolation of defect-related breakdown lifetime can be performed assuming an effective oxide thinning for defects.

AB - It is shown that oxide lifetime extrapolation using a log(t//B//D) or log(Q//B//D) against 1/E//o//x plot, where log(t//B//D) and log (Q//B//D) are the time and charge to breakdown respectively, is accurate and has a sound theoretical basis. The completion of a highly accelerated oxide test in seconds appears to be feasible. The acceleration factor is also a function of the severity of the oxide defect. Extrapolation of defect-related breakdown lifetime can be performed assuming an effective oxide thinning for defects.

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M3 - Conference article

AN - SCOPUS:0023537505

SP - 23

EP - 24

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

SN - 0743-1562

ER -