ACCELERATED TESTING OF SILICON DIOXIDE WEAROUT.

I. C. Chen*, J. Lee, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference article

5 Scopus citations

Abstract

It is shown that oxide lifetime extrapolation using a log(t//B//D) or log(Q//B//D) against 1/E//o//x plot, where log(t//B//D) and log (Q//B//D) are the time and charge to breakdown respectively, is accurate and has a sound theoretical basis. The completion of a highly accelerated oxide test in seconds appears to be feasible. The acceleration factor is also a function of the severity of the oxide defect. Extrapolation of defect-related breakdown lifetime can be performed assuming an effective oxide thinning for defects.

Original languageEnglish
Pages (from-to)23-24
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
StatePublished - 1 Dec 1987

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