Abstract
It is shown that oxide lifetime extrapolation using a log(t//B//D) or log(Q//B//D) against 1/E//o//x plot, where log(t//B//D) and log (Q//B//D) are the time and charge to breakdown respectively, is accurate and has a sound theoretical basis. The completion of a highly accelerated oxide test in seconds appears to be feasible. The acceleration factor is also a function of the severity of the oxide defect. Extrapolation of defect-related breakdown lifetime can be performed assuming an effective oxide thinning for defects.
Original language | English |
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Pages (from-to) | 23-24 |
Number of pages | 2 |
Journal | Digest of Technical Papers - Symposium on VLSI Technology |
State | Published - 1 Dec 1987 |