AC hot-carrier degradation in a voltage controlled oscillator

Chun Jiang*, Eric Johnson, J. J. Shaw, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

A voltage controlled oscillator can be a useful supplement to ring oscillators for studying AC hot-carrier-induced degradation. AC stress is carried out with a fixed gate voltage while the drain voltage rises and falls. We found that device parameters degrade under AC stressing with the same time and voltage dependence as under DC stress, suggesting that the same mechanism(s) are at work. Oscillator frequency degradation is correlated with device degradation produced by AC or DC stressing.

Original languageEnglish
Title of host publicationAnnual Proceedings - Reliability Physics (Symposium)
PublisherPubl by IEEE
Pages53-56
Number of pages4
ISBN (Print)0780307828
DOIs
StatePublished - 1 Jan 1993
Event31st Annual Proceedings of the 1993 Reliability Physics - Atlanta, GA, USA
Duration: 23 Mar 199325 Mar 1993

Publication series

NameAnnual Proceedings - Reliability Physics (Symposium)
ISSN (Print)0099-9512

Conference

Conference31st Annual Proceedings of the 1993 Reliability Physics
CityAtlanta, GA, USA
Period23/03/9325/03/93

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  • Cite this

    Jiang, C., Johnson, E., Shaw, J. J., & Hu, C-M. (1993). AC hot-carrier degradation in a voltage controlled oscillator. In Annual Proceedings - Reliability Physics (Symposium) (pp. 53-56). (Annual Proceedings - Reliability Physics (Symposium)). Publ by IEEE. https://doi.org/10.1109/RELPHY.1993.283302