AC charge centroid model for quantization of inversion layer in n-MOSFET

Ya Chin King; Hiroshi Fujioka; Shiroo Kamohara; Wen Chin Lee; Chen-Ming Hu

doi:10.1109/VTSA.1997.614768

AC charge centroid model for quantization of inversion layer in n-MOSFET

Ya Chin King^*, Hiroshi Fujioka, Shiroo Kamohara, Wen Chin Lee, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to conference › Paper › peer-review

13 Scopus citations

Abstract

A simulator using coupled Schrodinger equation, Poisson equation and Fermi-Dirac statistics to analyze inversion layer quantization is verified with the measured C-V data of thin oxide MOS capacitors closely. The effects of bias voltage, oxide thickness and doping concentration on the AC charge centroid is presented. A simple empirical model for the AC charge centroid of the inversion layer is proposed. An effective AC thickness is introduced to model the inversion capacitance in both weak and strong inversion regime. This model predicts the inversion layer capacitance and AC charge centroid in term of T_ax, V_t, and V_g explicitly.

Original language	English
Pages	245-249
Number of pages	5
DOIs	https://doi.org/10.1109/VTSA.1997.614768
State	Published - 1 Jan 1997
Event	Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications - Taipei, China Duration: 3 Jun 1997 → 5 Jun 1997

Conference

Conference	Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications
City	Taipei, China
Period	3/06/97 → 5/06/97

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10.1109/VTSA.1997.614768

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title = "AC charge centroid model for quantization of inversion layer in n-MOSFET",

abstract = "A simulator using coupled Schrodinger equation, Poisson equation and Fermi-Dirac statistics to analyze inversion layer quantization is verified with the measured C-V data of thin oxide MOS capacitors closely. The effects of bias voltage, oxide thickness and doping concentration on the AC charge centroid is presented. A simple empirical model for the AC charge centroid of the inversion layer is proposed. An effective AC thickness is introduced to model the inversion capacitance in both weak and strong inversion regime. This model predicts the inversion layer capacitance and AC charge centroid in term of Tax, Vt, and Vg explicitly.",

author = "King, {Ya Chin} and Hiroshi Fujioka and Shiroo Kamohara and Lee, {Wen Chin} and Chen-Ming Hu",

year = "1997",

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doi = "10.1109/VTSA.1997.614768",

language = "English",

pages = "245--249",

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AC charge centroid model for quantization of inversion layer in n-MOSFET. / King, Ya Chin; Fujioka, Hiroshi; Kamohara, Shiroo; Lee, Wen Chin; Hu, Chen-Ming.

1997. 245-249 Paper presented at Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications, Taipei, China, .

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - AC charge centroid model for quantization of inversion layer in n-MOSFET

AU - King, Ya Chin

AU - Fujioka, Hiroshi

AU - Kamohara, Shiroo

AU - Lee, Wen Chin

AU - Hu, Chen-Ming

PY - 1997/1/1

Y1 - 1997/1/1

N2 - A simulator using coupled Schrodinger equation, Poisson equation and Fermi-Dirac statistics to analyze inversion layer quantization is verified with the measured C-V data of thin oxide MOS capacitors closely. The effects of bias voltage, oxide thickness and doping concentration on the AC charge centroid is presented. A simple empirical model for the AC charge centroid of the inversion layer is proposed. An effective AC thickness is introduced to model the inversion capacitance in both weak and strong inversion regime. This model predicts the inversion layer capacitance and AC charge centroid in term of Tax, Vt, and Vg explicitly.

AB - A simulator using coupled Schrodinger equation, Poisson equation and Fermi-Dirac statistics to analyze inversion layer quantization is verified with the measured C-V data of thin oxide MOS capacitors closely. The effects of bias voltage, oxide thickness and doping concentration on the AC charge centroid is presented. A simple empirical model for the AC charge centroid of the inversion layer is proposed. An effective AC thickness is introduced to model the inversion capacitance in both weak and strong inversion regime. This model predicts the inversion layer capacitance and AC charge centroid in term of Tax, Vt, and Vg explicitly.

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U2 - 10.1109/VTSA.1997.614768

DO - 10.1109/VTSA.1997.614768

M3 - Paper

AN - SCOPUS:0030702636

SP - 245

EP - 249

Y2 - 3 June 1997 through 5 June 1997

ER -

AC charge centroid model for quantization of inversion layer in n-MOSFET

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