AC charge centroid model for quantization of inversion layer in n-MOSFET

Ya Chin King*, Hiroshi Fujioka, Shiroo Kamohara, Wen Chin Lee, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

13 Scopus citations

Abstract

A simulator using coupled Schrodinger equation, Poisson equation and Fermi-Dirac statistics to analyze inversion layer quantization is verified with the measured C-V data of thin oxide MOS capacitors closely. The effects of bias voltage, oxide thickness and doping concentration on the AC charge centroid is presented. A simple empirical model for the AC charge centroid of the inversion layer is proposed. An effective AC thickness is introduced to model the inversion capacitance in both weak and strong inversion regime. This model predicts the inversion layer capacitance and AC charge centroid in term of Tax, Vt, and Vg explicitly.

Original languageEnglish
Pages245-249
Number of pages5
DOIs
StatePublished - 1 Jan 1997
EventProceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications - Taipei, China
Duration: 3 Jun 19975 Jun 1997

Conference

ConferenceProceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications
CityTaipei, China
Period3/06/975/06/97

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