A simulator using coupled Schrodinger equation, Poisson equation and Fermi-Dirac statistics to analyze inversion layer quantization is verified with the measured C-V data of thin oxide MOS capacitors closely. The effects of bias voltage, oxide thickness and doping concentration on the AC charge centroid is presented. A simple empirical model for the AC charge centroid of the inversion layer is proposed. An effective AC thickness is introduced to model the inversion capacitance in both weak and strong inversion regime. This model predicts the inversion layer capacitance and AC charge centroid in term of Tax, Vt, and Vg explicitly.
|Number of pages||5|
|State||Published - 1 Jan 1997|
|Event||Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications - Taipei, China|
Duration: 3 Jun 1997 → 5 Jun 1997
|Conference||Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications|
|Period||3/06/97 → 5/06/97|