Absence of coherence effects of carrier energy and velocity in GaAs+-AlGaAs-GaAs- tunnel structures

Ta-Hui Wang*, J. P. Leburton, K. Hess

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

A Monte Carlo calculation has been performed to investigate the electron-phonon interaction and the possibility of coherent phonon emission in the buffer layer of semiconductor-insulator-semiconductor structures. Spatial coherence is shown to be virtually absent in the voltage range of tunnel-junction experiments where current structures with the period of the phonon energy have been observed. Tiny oscillations are obtained for carrier energy and velocity as a function of the gate voltage. However, the fluctuations are too weak to confirm models based on substantial periodic energy variations due to the emission of optical phonons.

Original languageEnglish
Pages (from-to)2906-2908
Number of pages3
JournalPhysical Review B
Volume33
Issue number4
DOIs
StatePublished - 1 Jan 1986

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