Abruptness of Ge composition at the Si/SiGe interface grown by ultrahigh vacuum chemical vapor deposition

W. C. Tsai*, C. Y. Chang, T. G. Jung, T. S. Liou, G. W. Huang, T. C. Chang, L. P. Chen, Horng-Chih Lin

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

A model is proposed to estimate the interfacial abruptness of the Si/SiGe heterojunction. In this model, a transition region with linearly graded Ge composition is assumed at the Si/SiGe interface. The Ge composition x of Si/SiGe quantum well grown by ultrahigh vacuum chemical vapor deposition at 550°C is found to increase with the deposition time as deposition at the same gas phase composition. This phenomenon can be explained by this model and the fitting results match the measured data. The thickness of the transition region and the transition time can be extracted from these fittings. The transition thicknesses are found to be about 1.9 nm or thinner as grown at 550°C or below.

Original languageEnglish
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
StatePublished - 1 Dec 1994

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