Abnormal subthreshold leakage current at high temperature in InGaZnO thin-film transistors

Geng Wei Chang*, Ting Chang Chang, Jhe Ciou Jhu, Tsung Ming Tsai, Yong En Syu, Kuan Chang Chang, Ya-Hsiang Tai, Fu Yen Jian, Ya Chi Hung

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Abnormal subthreshold leakage current is observed at high temperature in amorphous InGaZnO thin-film transistors. The transfer curve exhibits an apparent subthreshold current stretch-out phenomenon that becomes more serious with increasing temperatures. The negative bias temperature instability experiment has been used to prove high-temperature-induced hole generation. Furthermore, the transfer characteristics with different drain voltages have been also used to confirm the status of hole accumulation. These pieces of evidence clearly defined the stretch-out phenomenon, which is caused by thermal-induced hole generation and accumulation at the source region that leads to source-side barrier lowering.

Original languageEnglish
Article number6148254
Pages (from-to)540-542
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number4
DOIs
StatePublished - 1 Apr 2012

Keywords

  • Indium-gallium-zinc-oxide (IGZO)
  • temperature
  • thermal-induced hole
  • thin-film transistors (TFTs)

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