Abnormal sub-threshold swing degradation under dynamic hot carrier stress in HfO2/TiN n-channel metal-oxide-semiconductor field-effect- transistors

Jyun Yu Tsai, Ting Chang Chang, Wen Hung Lo, Ching En Chen, Szu Han Ho, Hua Mao Chen, Ya-Hsiang Tai, Osbert Cheng, Cheng Tung Huang

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

This work finds abnormal sub-threshold swing (S.S.) degradation under dynamic hot carrier stress (HCS) in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric. Results indicate that there is no change in S.S. after dynamic HCS due to band-to-band hot hole injection at the drain side which acts to diminish the stress field. Moreover, the impaired stress field causes the interface states to mainly distribute in shallow states. This results in ON state current and transconductance decreases, whereas S.S. degradation is insignificant after dynamic HCS. The proposed model is confirmed by one-side charge pumping measurement and gate-to-drain capacitance at varying frequencies.

Original languageEnglish
Article number022106
JournalApplied Physics Letters
Volume103
Issue number2
DOIs
StatePublished - 8 Jul 2013

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