Abnormal off-state current in multiple silicon nanowire MOS transistors

Qanqun Yu, Xuan Feng, Hei Wong, Kuniyuki Kakushima, Hiroshi Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work reports the observation of abnormally large off-state currents in silicon nanowire transistors with gate length less than 2.5 μm. As the gate lengths as well as the source/drain doping level were well beyond the punchthrough conditions, we ascribed this observation to the charge transport along the corners/boundaries of the nanowires. Temperature dependent characteristics were also investigated. The threshold voltage decreases linearly as the temperature increases which is ascribed to the charge states at oxide/nanowire interfaces. Corner and surface of nanowire thus play an important role for ultra-short nanowire transistors and that calls for shape of nanowire optimation for device design.

Original languageEnglish
Title of host publicationProceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages435-438
Number of pages4
ISBN (Electronic)9781479983636
DOIs
StatePublished - 30 Sep 2015
Event11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 - Singapore, Singapore
Duration: 1 Jun 20154 Jun 2015

Publication series

NameProceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015

Conference

Conference11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015
CountrySingapore
CitySingapore
Period1/06/154/06/15

Keywords

  • corner effects
  • short-channel effects
  • silicon nanowire
  • temperature effects

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    Yu, Q., Feng, X., Wong, H., Kakushima, K., & Iwai, H. (2015). Abnormal off-state current in multiple silicon nanowire MOS transistors. In Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 (pp. 435-438). [7285144] (Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2015.7285144