Abnormal hump in capacitance-voltage measurements induced by ultraviolet light in a-IGZO thin-film transistors

Yu Ching Tsao, Ting Chang Chang*, Hua Mao Chen, Bo Wei Chen, Hsiao Cheng Chiang, Guan Fu Chen, Yu Chieh Chien, Ya-Hsiang Tai, Yu Ju Hung, Shin Ping Huang, Chung Yi Yang, Wu-Ching Chou

*Corresponding author for this work

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

This work demonstrates the generation of abnormal capacitance for amorphous indium-gallium-zinc oxide (a-InGaZnO 4 ) thin-film transistors after being subjected to negative bias stress under ultraviolet light illumination stress (NBIS). At various operation frequencies, there are two-step tendencies in their capacitance-voltage curves. When gate bias is smaller than threshold voltage, the measured capacitance is dominated by interface defects. Conversely, the measured capacitance is dominated by oxygen vacancies when gate bias is larger than threshold voltage. The impact of these interface defects and oxygen vacancies on capacitance-voltage curves is verified by TCAD simulation software.

Original languageEnglish
Article number023501
JournalApplied Physics Letters
Volume110
Issue number2
DOIs
StatePublished - 9 Jan 2017

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