Abnormal ESD Failure Mechanism in High-Pin-Count BGA Packaged ICs Due to Stressing Nonconnected Balls

Wen Yu Lo*, Ming-Dou Ker

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

An abnormal failure mechanism due to ESD pulse applied on the nonconnected (NC) solder balls of a high-pin-count (683 balls) BGA packaged chipset IC is presented. The ESD test results of the IC product were found below human-body-model (HBM) 2 kV when stressing all balls or only stressing NC balls, but above HBM 3 kV when stressing all balls excluding NC balls. Failure analyses, including scanning electron microscopy (SEM) photographs and the measurement of current waveforms during ESD discharging event, have been performed. With a new proposed equivalent model, a clear explanation on this unusual phenomenon is found to have a high correlation to the small capacitor method (SCM). Several solutions to overcome this failure mechanism are also discussed.

Original languageEnglish
Pages (from-to)24-31
Number of pages8
JournalIEEE Transactions on Device and Materials Reliability
Volume4
Issue number1
DOIs
StatePublished - 1 Mar 2004

Keywords

  • Ball grid array (BGA)
  • Charged-device model (CDM)
  • Electrostatic discharge (ESD)
  • Scanning electron microscopy (SEM)
  • Small capacitor method (SCM)

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