Abnormal ESD damages occur in interface circuits between different power domains in ND-mode MM ESD stress

Hsiang Pin Hung*, Ming-Dou Ker, Shih Hung Chen, Che Hao Chuang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

Complex ESD failure mechanisms have been found in the interface circuits of an IC product with multiple separated power domains. The MM ESD robustness can not achieve 150 V in this IC product with separated power domains, although it has the 2-kV HBM ESD robustness. The ND-mode MM ESD currents were discharged by circuitous current paths through interface circuits to cause the gate oxide damage, junction filament, and contact destroy of the internal transistors. The detailed discharging paths of each ND-mode ESD failure were analysed in this paper.

Original languageEnglish
Title of host publicationProceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006
Pages163-166
Number of pages4
DOIs
StatePublished - 1 Dec 2006
Event13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 - Singapore, Singapore
Duration: 3 Jul 20067 Jul 2006

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006
CountrySingapore
CitySingapore
Period3/07/067/07/06

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