Abnormal Dual Channel Formation Induced by Hydrogen Diffusion from SiN x Interlayer Dielectric in Top Gate a-InGaZnO Transistors

Guan Fu Chen, Ting Chang Chang, Hua Mao Chen, Bo Wei Chen, Hong Chih Chen, Cheng Ya Li, Ya-Hsiang Tai, Yu Ju Hung, Kuo Jui Chang, Kai Chung Cheng, Chen Shuo Huang, Kuo Kuang Chen, Hsueh Hsing Lu, Yu Hsin Lin

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12 Scopus citations


This letter investigates effects of different channel dimensions in top-gate a-InGaZnO 4 thin-film transistors with SiN x interlayer dielectric. In narrow channel devices, hydrogen atoms in the SiN x layer diffuse into the entire active layer, inducing a single channel. However, in wider channel devices, the diffusion distance for hydrogen atoms is insufficient to affect the whole channel, instead inducing a double channel. In addition, under hot carrier stress, narrow and wide channels exhibit different degradation behaviors, with simulations showing a strong electrical field at IGZO near the drain terminal of the main channel, which is unaffected by hydrogen.

Original languageEnglish
Article number7835218
Pages (from-to)334-337
Number of pages4
JournalIEEE Electron Device Letters
Issue number3
StatePublished - 1 Mar 2017


  • Top gate TFTs
  • dual channel
  • hump
  • indium gallium zinc oxide (IGZO)

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