Abnormal contact resistance reduction of bonded copper interconnects in three-dimensional integration during current stressing

Kuan-Neng Chen*, C. S. Tan, A. Fan, R. Reif

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

Bonded copper interconnects were stressed with current to measure the specific contact resistance. For bonded copper interconnects without a prebonding HCl clean, the corresponding specific contact resistance did not change while increasing the stress current. However, for some interconnects with the prebonding HCl clean, an abnormal contact resistance reduction was observed during the increase of the stress current. The rise of temperature at the bonding interface area due to Joule heating under high current density may have caused the decrease of contact resistance. This behavior may be one option for quality enhancement in 3D integration at low temperature.

Original languageEnglish
Article number011903
JournalApplied Physics Letters
Volume86
Issue number1
DOIs
StatePublished - 1 Jan 2005

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