Ablation lithography is based on the photo-decomposition ablation of polymer materials by excimer laser. It is a self-development process, and accordingly possible to reduce the throughput time and manufacturing cost of TFT-LCD. The major alterations from the conventional photolithography are the resist material and the mask. Developing both the technologies and using an experimental exposure& aligner, we fabricated a TFT pattern on 300 × 400 mm2 glass substrate. The result proves the feasibility of EAL as an high throughput lithography suitable for a-Si TFT.