Ablation lithography for TFT-LCD

Kenkichi Suzuki; Nobuaki Hayashi; Hiroshi Masuhara; Thomas K. Lippert

doi:10.1557/PROC-685-D1.2.1

Ablation lithography for TFT-LCD

Kenkichi Suzuki^*, Nobuaki Hayashi, Hiroshi Masuhara, Thomas K. Lippert

^*Corresponding author for this work

Department of Applied Chemistry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Ablation lithography is based on the photo-decomposition ablation of polymer materials by excimer laser. It is a self-development process, and accordingly possible to reduce the throughput time and manufacturing cost of TFT-LCD. The major alterations from the conventional photolithography are the resist material and the mask. Developing both the technologies and using an experimental exposure& aligner, we fabricated a TFT pattern on 300 × 400 mm² glass substrate. The result proves the feasibility of EAL as an high throughput lithography suitable for a-Si TFT.

Original language	English
Title of host publication	Advanced Materials and Devices for Large-Area Electronics
Pages	1-10
Number of pages	10
DOIs	https://doi.org/10.1557/PROC-685-D1.2.1
State	Published - 1 Dec 2001
Event	2001 MRS Spring Meeting - San Francisco, CA, United States Duration: 16 Apr 2001 → 20 Apr 2001

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	685
ISSN (Print)	0272-9172

Conference

Conference	2001 MRS Spring Meeting
Country	United States
City	San Francisco, CA
Period	16/04/01 → 20/04/01

Access to Document

10.1557/PROC-685-D1.2.1

Link to publication in Scopus

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title = "Ablation lithography for TFT-LCD",

abstract = "Ablation lithography is based on the photo-decomposition ablation of polymer materials by excimer laser. It is a self-development process, and accordingly possible to reduce the throughput time and manufacturing cost of TFT-LCD. The major alterations from the conventional photolithography are the resist material and the mask. Developing both the technologies and using an experimental exposure& aligner, we fabricated a TFT pattern on 300 × 400 mm2 glass substrate. The result proves the feasibility of EAL as an high throughput lithography suitable for a-Si TFT.",

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AU - Suzuki, Kenkichi

AU - Hayashi, Nobuaki

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AU - Lippert, Thomas K.

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N2 - Ablation lithography is based on the photo-decomposition ablation of polymer materials by excimer laser. It is a self-development process, and accordingly possible to reduce the throughput time and manufacturing cost of TFT-LCD. The major alterations from the conventional photolithography are the resist material and the mask. Developing both the technologies and using an experimental exposure& aligner, we fabricated a TFT pattern on 300 × 400 mm2 glass substrate. The result proves the feasibility of EAL as an high throughput lithography suitable for a-Si TFT.

AB - Ablation lithography is based on the photo-decomposition ablation of polymer materials by excimer laser. It is a self-development process, and accordingly possible to reduce the throughput time and manufacturing cost of TFT-LCD. The major alterations from the conventional photolithography are the resist material and the mask. Developing both the technologies and using an experimental exposure& aligner, we fabricated a TFT pattern on 300 × 400 mm2 glass substrate. The result proves the feasibility of EAL as an high throughput lithography suitable for a-Si TFT.

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