Ablation lithography for TFT-LCD

Kenkichi Suzuki; Nobuaki Hayashi; Hiroshi Masuhara; Thomas K. Lippert

doi:10.1557/PROC-685-D1.2.1

Ablation lithography for TFT-LCD

Kenkichi Suzuki^*, Nobuaki Hayashi, Hiroshi Masuhara, Thomas K. Lippert

^*Corresponding author for this work

Department of Applied Chemistry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Ablation lithography is based on the photo-decomposition ablation of polymer materials by excimer laser. It is a self-development process, and accordingly possible to reduce the throughput time and manufacturing cost of TFT-LCD. The major alterations from the conventional photolithography are the resist material and the mask. Developing both the technologies and using an experimental exposure& aligner, we fabricated a TFT pattern on 300 × 400 mm² glass substrate. The result proves the feasibility of EAL as an high throughput lithography suitable for a-Si TFT.

Original language	English
Title of host publication	Advanced Materials and Devices for Large-Area Electronics
Pages	1-10
Number of pages	10
DOIs	https://doi.org/10.1557/PROC-685-D1.2.1
State	Published - 1 Dec 2001
Event	2001 MRS Spring Meeting - San Francisco, CA, United States Duration: 16 Apr 2001 → 20 Apr 2001

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	685
ISSN (Print)	0272-9172

Conference

Conference	2001 MRS Spring Meeting
Country	United States
City	San Francisco, CA
Period	16/04/01 → 20/04/01

Access to Document

10.1557/PROC-685-D1.2.1

Link to publication in Scopus

Fingerprint Dive into the research topics of 'Ablation lithography for TFT-LCD'. Together they form a unique fingerprint.

Cite this

Suzuki, K., Hayashi, N., Masuhara, H., & Lippert, T. K. (2001). Ablation lithography for TFT-LCD. In Advanced Materials and Devices for Large-Area Electronics (pp. 1-10). (Materials Research Society Symposium Proceedings; Vol. 685). https://doi.org/10.1557/PROC-685-D1.2.1

@inproceedings{6c0bd852895440b5b938c9f195d01bc7,

title = "Ablation lithography for TFT-LCD",

abstract = "Ablation lithography is based on the photo-decomposition ablation of polymer materials by excimer laser. It is a self-development process, and accordingly possible to reduce the throughput time and manufacturing cost of TFT-LCD. The major alterations from the conventional photolithography are the resist material and the mask. Developing both the technologies and using an experimental exposure& aligner, we fabricated a TFT pattern on 300 × 400 mm2 glass substrate. The result proves the feasibility of EAL as an high throughput lithography suitable for a-Si TFT.",

author = "Kenkichi Suzuki and Nobuaki Hayashi and Hiroshi Masuhara and Lippert, {Thomas K.}",

year = "2001",

month = dec,

day = "1",

doi = "10.1557/PROC-685-D1.2.1",

language = "English",

isbn = "1558996214",

series = "Materials Research Society Symposium Proceedings",

pages = "1--10",

booktitle = "Advanced Materials and Devices for Large-Area Electronics",

note = "null ; Conference date: 16-04-2001 Through 20-04-2001",

}

TY - GEN

T1 - Ablation lithography for TFT-LCD

AU - Suzuki, Kenkichi

AU - Hayashi, Nobuaki

AU - Masuhara, Hiroshi

AU - Lippert, Thomas K.

PY - 2001/12/1

Y1 - 2001/12/1

N2 - Ablation lithography is based on the photo-decomposition ablation of polymer materials by excimer laser. It is a self-development process, and accordingly possible to reduce the throughput time and manufacturing cost of TFT-LCD. The major alterations from the conventional photolithography are the resist material and the mask. Developing both the technologies and using an experimental exposure& aligner, we fabricated a TFT pattern on 300 × 400 mm2 glass substrate. The result proves the feasibility of EAL as an high throughput lithography suitable for a-Si TFT.

AB - Ablation lithography is based on the photo-decomposition ablation of polymer materials by excimer laser. It is a self-development process, and accordingly possible to reduce the throughput time and manufacturing cost of TFT-LCD. The major alterations from the conventional photolithography are the resist material and the mask. Developing both the technologies and using an experimental exposure& aligner, we fabricated a TFT pattern on 300 × 400 mm2 glass substrate. The result proves the feasibility of EAL as an high throughput lithography suitable for a-Si TFT.

UR - http://www.scopus.com/inward/record.url?scp=34249873520&partnerID=8YFLogxK

U2 - 10.1557/PROC-685-D1.2.1

DO - 10.1557/PROC-685-D1.2.1

M3 - Conference contribution

AN - SCOPUS:34249873520

SN - 1558996214

SN - 9781558996212

T3 - Materials Research Society Symposium Proceedings

SP - 1

EP - 10

BT - Advanced Materials and Devices for Large-Area Electronics

Y2 - 16 April 2001 through 20 April 2001

ER -