Ab initio chemical kinetic study for reactions of H atoms with SiH 4 and Si2H6: Comparison of theory and experiment

S. Y. Wu, P. Raghunath, Jong-Shinn Wu, Ming-Chang Lin

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The reactions of hydrogen atom with silane and disilane are relevant to the understanding of catalytic chemical vapor deposition (Cat-CVD) and plasma enhanced chemical vapor deposition (PECVD) processes. In the present study, these reactions have been investigated by means of ab initio molecular-orbital and transition state theory calculations. In both reactions, the most favorable pathway was found to be the H abstraction leading to the formation of SiH 3 and Si2H5 products, with 5.1 and 4.0 kca/mol barriers, respectively. For H + Si2H6, another possible reaction pathway giving SiH3 + SiH4 may take place with two different mechanisms with 4.3 and 6.7 kcal/mol barriers for H-atom attacking side-way and end-on, respectively. To validate the calculated energies of the reactions, two isodesmic reactions, SiH3+CH4→ SiH4+CH3 and Si2H5+C 2H6→ Si2H6+C2H 5 were employed; the predicted heats of the formation for SiH 3 (49.0 kcal/mol) and Si2H5 (58.6 kcal/mol) were found to agree well with the experimental data. Finally, rate constants for both H-abstraction reactions predicted in the range of 290-2500 K agree well with experimental data. The result also shows that H+Si2H6 producing H2+Si2H5 is more favorable than SiH3+SiH4

Original languageEnglish
Pages (from-to)633-639
Number of pages7
JournalJournal of Physical Chemistry A
Issue number1
StatePublished - 14 Jan 2010

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