A wideband CMOS mixer with feedforward compensated differential transconductor

Pei-Zong Rao; Tang-Yuan Chang; Ching-Piau Liang; Shyh-Jong Chung

doi:10.1109/ISCAS.2007.377889

A wideband CMOS mixer with feedforward compensated differential transconductor

Pei-Zong Rao, Tang-Yuan Chang, Ching-Piau Liang, Shyh-Jong Chung

National Chiao Tung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

A 2.4 to 10.7 GHz wideband mixer for multi-band orthogonal frequency division multiplexing ultra-wideband (MB-OFDM UWB) applications is designed using a TSMC 0.18 mu m CMOS technology. The designed mixer uses a LC folded cascode structure and a feedforward compensated high-linearity differential transconductor to improve the linearity. The measured results reveal that the proposed mixer achieves power conversion gain of 3.3 +/- 1.5 dB, third-order input intercept point (IIP3) of 6.9 dBm, and input l-dB compression point (P-1dB) of -2.8 dBm in the power consumption of 14.4mW from a 1.8V power supply. The chip area is 0.70 x 0.58 mm(2).

Original language	English
Title of host publication	2007 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-11
Publisher	IEEE
Pages	3892-3895
Number of pages	4
ISBN (Print)	978-1-4244-0920-4
DOIs	https://doi.org/10.1109/ISCAS.2007.377889
State	Published - 27 May 2007

Keywords

CMOS mixers
folded-mixer
UWB
differential transconductor

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10.1109/ISCAS.2007.377889

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Rao, P-Z., Chang, T-Y., Liang, C-P., & Chung, S-J. (2007). A wideband CMOS mixer with feedforward compensated differential transconductor. In 2007 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-11 (pp. 3892-3895). IEEE. https://doi.org/10.1109/ISCAS.2007.377889

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title = "A wideband CMOS mixer with feedforward compensated differential transconductor",

abstract = "A 2.4 to 10.7 GHz wideband mixer for multi-band orthogonal frequency division multiplexing ultra-wideband (MB-OFDM UWB) applications is designed using a TSMC 0.18 mu m CMOS technology. The designed mixer uses a LC folded cascode structure and a feedforward compensated high-linearity differential transconductor to improve the linearity. The measured results reveal that the proposed mixer achieves power conversion gain of 3.3 +/- 1.5 dB, third-order input intercept point (IIP3) of 6.9 dBm, and input l-dB compression point (P-1dB) of -2.8 dBm in the power consumption of 14.4mW from a 1.8V power supply. The chip area is 0.70 x 0.58 mm(2).",

keywords = "CMOS mixers, folded-mixer, UWB, differential transconductor",

author = "Pei-Zong Rao and Tang-Yuan Chang and Ching-Piau Liang and Shyh-Jong Chung",

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AU - Chang, Tang-Yuan

AU - Liang, Ching-Piau

AU - Chung, Shyh-Jong

PY - 2007/5/27

Y1 - 2007/5/27

N2 - A 2.4 to 10.7 GHz wideband mixer for multi-band orthogonal frequency division multiplexing ultra-wideband (MB-OFDM UWB) applications is designed using a TSMC 0.18 mu m CMOS technology. The designed mixer uses a LC folded cascode structure and a feedforward compensated high-linearity differential transconductor to improve the linearity. The measured results reveal that the proposed mixer achieves power conversion gain of 3.3 +/- 1.5 dB, third-order input intercept point (IIP3) of 6.9 dBm, and input l-dB compression point (P-1dB) of -2.8 dBm in the power consumption of 14.4mW from a 1.8V power supply. The chip area is 0.70 x 0.58 mm(2).

AB - A 2.4 to 10.7 GHz wideband mixer for multi-band orthogonal frequency division multiplexing ultra-wideband (MB-OFDM UWB) applications is designed using a TSMC 0.18 mu m CMOS technology. The designed mixer uses a LC folded cascode structure and a feedforward compensated high-linearity differential transconductor to improve the linearity. The measured results reveal that the proposed mixer achieves power conversion gain of 3.3 +/- 1.5 dB, third-order input intercept point (IIP3) of 6.9 dBm, and input l-dB compression point (P-1dB) of -2.8 dBm in the power consumption of 14.4mW from a 1.8V power supply. The chip area is 0.70 x 0.58 mm(2).

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KW - differential transconductor

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