A W-spacer GOLD TFT with high performance and high reliability

Hsiao-Wen Zan*, D. Z. Peng, P. S. Shih, T. C. Chang, Po-Tsun Liu, C. Y. Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

In this paper, we successfully fabricated Gate-Overlapped Lightly-doped Drain (GOLD) polycrystalline silicon thin-film transistors (poly-Si TFTs) with selectively deposited spacers. Under appropriate deposition conditions, tungsten (W) films can be selectively deposited on poly-Si gate electrodes to form spacers without any additional etching process. Compared to the conventional poly-Si TFTs without LDD structures, our devices effectively suppress the kink effect and the punch-through phenomenon in short-channel devices. The hot-carrier reliability of our devices is also improved due to the reduced electric field on the drain side. In addition, the transconductance of our devices is compatible to that of conventional devices. This is because the W-spacer acts as a part of gate electrode to induce channel when the device is operated under ON state.

Original languageEnglish
Pages (from-to)595-598
Number of pages4
JournalVacuum
Volume67
Issue number3-4
DOIs
StatePublished - 26 Sep 2002

Keywords

  • GOLD
  • Hot-carrier stress
  • Kink effect
  • LDD
  • Poly-Si TFT
  • Punch through
  • Selective tungsten (W)
  • Short channel

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