A W-band 6.8 mW low-noise amplifier in 90 nm CMOS technology using noise measure

Po Chen Yeh, Chien-Nan Kuo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

A W-band low-noise amplifier consisting of seven common-source transistor stages is designed using noise measure as the figure of merit for circuit optimization. Fabricated in 90 nm CMOS technology, the die size is 0.38 mm2, while the core active area only 0.1 mm2. The circuit gives peak power gain of 21.5 dB at 90 GHz and noise figure of 8.3 dB, with dc power consumption of only 6.8 mW.

Original languageEnglish
Title of host publication2019 IEEE International Symposium on Circuits and Systems, ISCAS 2019 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728103976
DOIs
StatePublished - 1 Jan 2019
Event2019 IEEE International Symposium on Circuits and Systems, ISCAS 2019 - Sapporo, Japan
Duration: 26 May 201929 May 2019

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
Volume2019-May
ISSN (Print)0271-4310

Conference

Conference2019 IEEE International Symposium on Circuits and Systems, ISCAS 2019
CountryJapan
CitySapporo
Period26/05/1929/05/19

Keywords

  • CMOS
  • LNA
  • Low-power
  • Millimeter-wave
  • Noise measure
  • W-Band

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