A voltage-reference-free pulse density modulation (VRF-PDM) 1-V input switched-capacitor 1/2 voltage converter with output voltage trimming by hot carrier injection and periodic activation scheme

Xin Zhang*, Yu Pu, Koichi Ishida, Yoshikatsu Ryu, Yasuyuki Okuma, Po-Hung Chen, Kazunori Watanabe, Takayasu Sakurai, Makoto Takamiya

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

A 1-V input, 0.45-V output switched-capacitor (SC) 2:1 voltage converter is developed in 65-nm CMOS. A proposed voltage-reference-free pulse density modulation (VRF-PDM) increased the efficiency from 17% to 73% at 50-μA output current by reducing the pulse density and eliminating the voltage reference circuit. An output voltage trimming by the hot carrier injection to a comparator and a periodic activation scheme of the SC converter are also proposed to solve the problems attributed to VRF-PDM.

Original languageEnglish
Title of host publication2011 Symposium on VLSI Circuits, VLSIC 2011 - Digest of Technical Papers
Pages280-281
Number of pages2
StatePublished - 16 Sep 2011
Event2011 Symposium on VLSI Circuits, VLSIC 2011 - Kyoto, Japan
Duration: 15 Jun 201117 Jun 2011

Publication series

NameIEEE Symposium on VLSI Circuits, Digest of Technical Papers

Conference

Conference2011 Symposium on VLSI Circuits, VLSIC 2011
CountryJapan
CityKyoto
Period15/06/1117/06/11

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    Zhang, X., Pu, Y., Ishida, K., Ryu, Y., Okuma, Y., Chen, P-H., Watanabe, K., Sakurai, T., & Takamiya, M. (2011). A voltage-reference-free pulse density modulation (VRF-PDM) 1-V input switched-capacitor 1/2 voltage converter with output voltage trimming by hot carrier injection and periodic activation scheme. In 2011 Symposium on VLSI Circuits, VLSIC 2011 - Digest of Technical Papers (pp. 280-281). [5986453] (IEEE Symposium on VLSI Circuits, Digest of Technical Papers).