A versatile, SOI BiCMOS technology with complementary lateral BJT's

S. Parke, F. Assaderaghi, Jian Chen, J. King, Chen-Ming Hu, P. K. Ko

Research output: Chapter in Book/Report/Conference proceedingConference contribution

26 Scopus citations

Abstract

A silicon-on-insulator, fully-complementary BiCMOS process has been developed for realizing high-performance circuit operation in the sub-3.3 V power supply regime. Complementary, double-diffused lateral BJTs and fully-overlapped, asymmetrical DDD MOSFETs have been successfully integrated in a 10-mask process by utilizing the process simplifications that are unique to thin-film SOI substrates. The BJTs exhibit the highest lateral current gains reported to date, with hfe=120 and 225 for the NPN and PNP, respectively. NPN ft=4.5 GHz was achieved, and ft>20 GHz is possible with an improved layout. The MOSFETs demonstrate excellent short-channel behavior down to Leff=0.18 mu m, with Tox=10 nm. The p+ gate, SOI PMOS device exhibits superior Idsat and gmsat. A record propagation delay of 12 ps/stage at Vdd=5 V and 300 K was obtained for the CMOS ring oscillators fabricated in this technology. This demonstrates the performance achievable with a deep-submicron SOI process.

Original languageEnglish
Title of host publication1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages453-456
Number of pages4
ISBN (Electronic)0780308174
DOIs
StatePublished - 1 Jan 1992
Event1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States
Duration: 13 Dec 199216 Dec 1992

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1992-December
ISSN (Print)0163-1918

Conference

Conference1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
CountryUnited States
CitySan Francisco
Period13/12/9216/12/92

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    Parke, S., Assaderaghi, F., Chen, J., King, J., Hu, C-M., & Ko, P. K. (1992). A versatile, SOI BiCMOS technology with complementary lateral BJT's. In 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 (pp. 453-456). [307399] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1992-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1992.307399