A versatile multi-gate MOSFET compact model: BSIM-MG

Chen-Ming Hu*, C. H. Lin, M. Dunga, D. Lu, A. Niknejad

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

BSIM-MG is a surface-potential based compact model for multi-gate MOSFETs such as FinFETs fabricated on either SOI or bulk substrates. It can model transistors with the gate controlling two, three, or four sides of the fin. The effects of body doping are modeled. It can also model a double-gate transistor with independently biased top and bottom gates and asymmetric top and bottom gate work-functions and dielectric thicknesses. It supports high performance metal-gate technologies as well low-cost polysilicon-gate memory technologies.

Original languageEnglish
Title of host publication2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings
Pages512-514
Number of pages3
StatePublished - 24 Aug 2007
Event2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007 - Santa Clara, CA, United States
Duration: 20 May 200724 May 2007

Publication series

Name2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings
Volume3

Conference

Conference2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007
CountryUnited States
CitySanta Clara, CA
Period20/05/0724/05/07

Keywords

  • BSIM
  • Compact model
  • Double gate
  • FinFET
  • Trigate

Fingerprint Dive into the research topics of 'A versatile multi-gate MOSFET compact model: BSIM-MG'. Together they form a unique fingerprint.

Cite this