A V-band MMIC SPDT passive HEMT switch using impedance transformation networks

Yu-Jiu Wang*, Kun You Lin, Dow Chih Niu, Huei Wang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations


A V-Band MMIC single pole double throw (SPDT) switch using GaAs PHEMT process is designed, fabricated and tested. In contrast to the conventional resonant-type switch design method, this passive FET switch circuit utilizes impedance transformation to compensate the drain-source capacitance effect for the off-state in millimeter-wave frequency range. This SPDT switch has a measured isolation better than 30 dB for the off-state and 4 dB insertion loss for the on-state from 53 GHz to 61 GHz. The isolation performance of this design approach outmatches previously published FET switches in this frequency range.

Original languageEnglish
Pages (from-to)253-256
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
StatePublished - 1 Dec 2001
EventInternational Microwave Symposium Digest IEEE-MTT-S 2001 - Phoenix, AZ, United States
Duration: 20 May 200125 May 2001

Fingerprint Dive into the research topics of 'A V-band MMIC SPDT passive HEMT switch using impedance transformation networks'. Together they form a unique fingerprint.

Cite this