Abstract
A V-Band MMIC single pole double throw (SPDT) switch using GaAs PHEMT process is designed, fabricated and tested. In contrast to the conventional resonant-type switch design method, this passive FET switch circuit utilizes impedance transformation to compensate the drain-source capacitance effect for the off-state in millimeter-wave frequency range. This SPDT switch has a measured isolation better than 30 dB for the off-state and 4 dB insertion loss for the on-state from 53 GHz to 61 GHz. The isolation performance of this design approach outmatches previously published FET switches in this frequency range.
Original language | English |
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Pages (from-to) | 253-256 |
Number of pages | 4 |
Journal | IEEE MTT-S International Microwave Symposium Digest |
Volume | 3 |
DOIs | |
State | Published - 1 Dec 2001 |
Event | International Microwave Symposium Digest IEEE-MTT-S 2001 - Phoenix, AZ, United States Duration: 20 May 2001 → 25 May 2001 |