A Unique Approach to Generate Self-Aligned T-Gate Transistors in Counter-Doped Poly-Si with High Etching Selectivity and Isotropy

Y. A. Huang, C. Y. Liang, K. P. Peng, K. M. Chen, G. W. Huang, Pei-Wen Li, Horng-Chih Lin*

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

A unique approach for fabricating poly-Si thin-film transistors (TFTs) with self-aligned T-shaped gate (T-gate) structure is reported. A counter-doped poly-Si process comprises an in-situ doped n+ poly-Si deposition followed by a subsequentshallow implantation of BF 2+. Both high etching isotropy in n+ poly-Si and high etching selectivity between n+ poly-Si and B-doped poly-Si in a Cl2-based plasma process are the key enablers for the fabrication of our T-gate structures. Thanks to good control in the shape and deformation of our T-gate structure, sidewall air-gap spacers in combination with self-aligned Ni silicided gate and source/drain were established. High-performance sub-micron poly-Si TFTs are evidenced by superior transfer characteristics measured on TFTs with effective gate length of 0.15μ m. The unique T-gate structure provides an effective way for possible production of poly-Si radio-frequency TFTs viable for emerging new applications.

Original languageEnglish
Article number8977479
Pages (from-to)397-400
Number of pages4
JournalIEEE Electron Device Letters
Volume41
Issue number3
DOIs
StatePublished - Mar 2020

Keywords

  • poly-Si
  • SALICIDE
  • selective etching
  • T-gate
  • TFT

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