A unified quantum correction model for nanoscale single- And double-gate MOSFETs under inversion conditions

Yi-Ming Li*, Shao Ming Yu

*Corresponding author for this work

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

In this paper a unified quantum correction charge model for nanoscale single- and double-gate MOS structures is presented. Based on the numerical solution of Schrödinger-Poisson equations, the developed quantum correction charge model is mainly optimized with respect to (i) the left and right positions of the charge concentration peak, (ii) the maximum of the charge concentration, (iii) the total inversion charge sheet density, and (iv) the average inversion charge depth, respectively. For nanoscale single- and double-gate MOS structures, this model predicts inversion layer electron density for various oxide thicknesses, silicon film thicknesses, and applied voltages. Compared to the Schrödinger-Poisson results, our model prediction is within 2.5% of accuracy for both the single- and double gate MOS structures on average. This quantum correction model has continuous derivatives and is therefore amenable to a device simulator.

Original languageEnglish
Pages (from-to)1009-1016
Number of pages8
JournalNanotechnology
Volume15
Issue number8
DOIs
StatePublished - Aug 2004

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