A unified mosfet channel charge model for device modeling in circuit simulation

Yuhua Cheng*, Kai Chen, Kiyotoka Imai, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

In this paper, we present a simple and accurate MOSFET channel charge model for device modeling in circuit simulation. The model can guarantee good continuities and smooth transitions of charge, capacitance, current, and transconductance from subthreshold to strong inversion with a unified analytical expression, and agrees with the experimental data well at various process and bias conditions from subthreshold and strong inversion, including the moderate inversion region of growing importance for low-voltage/power circuits.

Original languageEnglish
Pages (from-to)641-644
Number of pages4
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume17
Issue number8
DOIs
StatePublished - 1 Dec 1998

Keywords

  • Circuit simulation
  • Device modeling
  • Mosfet model

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