In this paper, we present a simple and accurate MOSFET channel charge model for device modeling in circuit simulation. The model can guarantee good continuities and smooth transitions of charge, capacitance, current, and transconductance from subthreshold to strong inversion with a unified analytical expression, and agrees with the experimental data well at various process and bias conditions from subthreshold and strong inversion, including the moderate inversion region of growing importance for low-voltage/power circuits.
|Number of pages||4|
|Journal||IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems|
|State||Published - 1 Dec 1998|
- Circuit simulation
- Device modeling
- Mosfet model