A unified mobility model for excimer laser annealed complementary thin film transistors simulation

Hsiao Yi Lin; Yi-Ming Li; Jam Wem Lee; Chaung Ming Chiu; S. M. Sze

A unified mobility model for excimer laser annealed complementary thin film transistors simulation

Hsiao Yi Lin^*, Yi-Ming Li, Jam Wem Lee, Chaung Ming Chiu, S. M. Sze

^*Corresponding author for this work

Institute of Communications Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

In this paper, a unified SPICE mobility model for excimer leaser annealed lower temperature polycrystalline silicon (LPTS) complementary thin film transistors (TFTs) is proposed. In comparing with the conventional RPI model, the proposed mobility model exhibits very good property in representing the vertical electrical field induced mobility degradation. Our model improves the correctness of the circuit simulation without increasing any complexity and having no any convergence issue. Comparisons among the conventional RPI TFT mobility model, and measurement data, this new mobility model demonstrated very good accuracy in the simulation of laser annealed LTPS TFTs. This TFT model is very useful in precisely modeling the circuit characteristics for the complementary system on panel (SOP) circuit.

Original language	English
Title of host publication	2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
Editors	M. Laudon, B. Romanowicz
Pages	13-16
Number of pages	4
State	Published - Jan 2004
Event	2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 - Boston, MA, United States Duration: 7 Mar 2004 → 11 Mar 2004

Publication series

Name	2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
Volume	2

Conference

Conference	2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
Country	United States
City	Boston, MA
Period	7/03/04 → 11/03/04

Keywords

Complementary TFT mode
Excimer laser annealed
Gate induced mobility degradation
LTPS
SPICE mobility model

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Lin, H. Y., Li, Y-M., Lee, J. W., Chiu, C. M., & Sze, S. M. (2004). A unified mobility model for excimer laser annealed complementary thin film transistors simulation. In M. Laudon, & B. Romanowicz (Eds.), 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 (pp. 13-16). (2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004; Vol. 2).

Lin, Hsiao Yi ; Li, Yi-Ming ; Lee, Jam Wem ; Chiu, Chaung Ming ; Sze, S. M. / A unified mobility model for excimer laser annealed complementary thin film transistors simulation. 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004. editor / M. Laudon ; B. Romanowicz. 2004. pp. 13-16 (2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004).

@inproceedings{c63214721668405d904f500badf832e3,

title = "A unified mobility model for excimer laser annealed complementary thin film transistors simulation",

abstract = "In this paper, a unified SPICE mobility model for excimer leaser annealed lower temperature polycrystalline silicon (LPTS) complementary thin film transistors (TFTs) is proposed. In comparing with the conventional RPI model, the proposed mobility model exhibits very good property in representing the vertical electrical field induced mobility degradation. Our model improves the correctness of the circuit simulation without increasing any complexity and having no any convergence issue. Comparisons among the conventional RPI TFT mobility model, and measurement data, this new mobility model demonstrated very good accuracy in the simulation of laser annealed LTPS TFTs. This TFT model is very useful in precisely modeling the circuit characteristics for the complementary system on panel (SOP) circuit.",

keywords = "Complementary TFT mode, Excimer laser annealed, Gate induced mobility degradation, LTPS, SPICE mobility model",

author = "Lin, {Hsiao Yi} and Yi-Ming Li and Lee, {Jam Wem} and Chiu, {Chaung Ming} and Sze, {S. M.}",

year = "2004",

month = jan,

language = "English",

isbn = "0972842276",

series = "2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004",

pages = "13--16",

editor = "M. Laudon and B. Romanowicz",

booktitle = "2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004",

note = "null ; Conference date: 07-03-2004 Through 11-03-2004",

}

Lin, HY, Li, Y-M, Lee, JW, Chiu, CM & Sze, SM 2004, A unified mobility model for excimer laser annealed complementary thin film transistors simulation. in M Laudon & B Romanowicz (eds), 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004. 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004, vol. 2, pp. 13-16, 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004, Boston, MA, United States, 7/03/04.

A unified mobility model for excimer laser annealed complementary thin film transistors simulation. / Lin, Hsiao Yi; Li, Yi-Ming; Lee, Jam Wem; Chiu, Chaung Ming; Sze, S. M.

2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004. ed. / M. Laudon; B. Romanowicz. 2004. p. 13-16 (2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A unified mobility model for excimer laser annealed complementary thin film transistors simulation

AU - Lin, Hsiao Yi

AU - Li, Yi-Ming

AU - Lee, Jam Wem

AU - Chiu, Chaung Ming

AU - Sze, S. M.

PY - 2004/1

Y1 - 2004/1

N2 - In this paper, a unified SPICE mobility model for excimer leaser annealed lower temperature polycrystalline silicon (LPTS) complementary thin film transistors (TFTs) is proposed. In comparing with the conventional RPI model, the proposed mobility model exhibits very good property in representing the vertical electrical field induced mobility degradation. Our model improves the correctness of the circuit simulation without increasing any complexity and having no any convergence issue. Comparisons among the conventional RPI TFT mobility model, and measurement data, this new mobility model demonstrated very good accuracy in the simulation of laser annealed LTPS TFTs. This TFT model is very useful in precisely modeling the circuit characteristics for the complementary system on panel (SOP) circuit.

AB - In this paper, a unified SPICE mobility model for excimer leaser annealed lower temperature polycrystalline silicon (LPTS) complementary thin film transistors (TFTs) is proposed. In comparing with the conventional RPI model, the proposed mobility model exhibits very good property in representing the vertical electrical field induced mobility degradation. Our model improves the correctness of the circuit simulation without increasing any complexity and having no any convergence issue. Comparisons among the conventional RPI TFT mobility model, and measurement data, this new mobility model demonstrated very good accuracy in the simulation of laser annealed LTPS TFTs. This TFT model is very useful in precisely modeling the circuit characteristics for the complementary system on panel (SOP) circuit.

KW - Complementary TFT mode

KW - Excimer laser annealed

KW - Gate induced mobility degradation

KW - LTPS

KW - SPICE mobility model

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M3 - Conference contribution

AN - SCOPUS:6344239050

SN - 0972842276

T3 - 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004

SP - 13

EP - 16

BT - 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004

A2 - Laudon, M.

A2 - Romanowicz, B.

Y2 - 7 March 2004 through 11 March 2004

ER -

A unified mobility model for excimer laser annealed complementary thin film transistors simulation

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Keywords

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