In this paper, a unified SPICE mobility model for excimer leaser annealed lower temperature polycrystalline silicon (LPTS) complementary thin film transistors (TFTs) is proposed. In comparing with the conventional RPI model, the proposed mobility model exhibits very good property in representing the vertical electrical field induced mobility degradation. Our model improves the correctness of the circuit simulation without increasing any complexity and having no any convergence issue. Comparisons among the conventional RPI TFT mobility model, and measurement data, this new mobility model demonstrated very good accuracy in the simulation of laser annealed LTPS TFTs. This TFT model is very useful in precisely modeling the circuit characteristics for the complementary system on panel (SOP) circuit.