A unified mathematical framework for intermediate band solar cells

Shih-Chun Lin*, Sze Ming Fu, Yan Kai Zhong

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

The modeling of intermediate band solar cell has been developed since 90's and continued effort is made to facilitate the realization of this novel device. Two formulation has been used to model the generation recombination rate of IBSC including conventionally available modified-Shockley-Reed-Hall formulation or later proposed IBSC formulation (Luque and Marti, PRL 78 5014). This paper proves that these two formulations are actually mathematically equivalent and actually one can be derived from the other. A unified mathematical framework can thus be established and the conventional drift-diffusion model can thus be employed for modeling novel IBSC with the inclusion of new model for intermediate band carrier transport. The debate whether the addition of impurity atoms would decrease the efficiency by shorter recombination lifetime or increase the efficiency by more absorption is studied, and results confirm that the efficient removal of photo-generated carriers from valence and conduction bands and solar concentration is the key to the success of subbandgap photovoltaics.

Original languageEnglish
Title of host publicationProgram - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages78-82
Number of pages5
DOIs
StatePublished - 26 Nov 2012
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: 3 Jun 20128 Jun 2012

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference38th IEEE Photovoltaic Specialists Conference, PVSC 2012
CountryUnited States
CityAustin, TX
Period3/06/128/06/12

Keywords

  • Shockley-Reed-Hall
  • drift-diffusion model
  • impurity photovoltaic effect
  • intermediate band solar cell

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