A Unified Flicker Noise Model for FDSOI MOSFETs Including Back-bias Effect

Pragya Kushwaha, Harshit Agarwal, Chetan Kumar Dabhi, Yen Kai Lin, J. P. Duarte, Chen-Ming Hu, Yogesh Singh Chauhan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

A physics-based unified flicker noise model for FDSOI transistor is proposed. Flicker noise power spectral density (PSD) at the front and back interfaces are calculated using oxide-trap-induced carrier number (CNF) and correlated surface mobility fluctuation (CMF) mechanisms. The model predicts correct flicker noise behavior from weak inversion region to strong inversion region for a wide range of the front and backgate voltages. The proposed model is computationally efficient and implementable in any SPICE model for circuit simulations.

Original languageEnglish
Title of host publication2018 IEEE International Conference on Electronics, Computing and Communication Technologies, CONECCT 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538611128
DOIs
StatePublished - 4 Oct 2018
Event2018 IEEE International Conference on Electronics, Computing and Communication Technologies, CONECCT 2018 - Bangalore, India
Duration: 16 Mar 201817 Mar 2018

Publication series

Name2018 IEEE International Conference on Electronics, Computing and Communication Technologies, CONECCT 2018

Conference

Conference2018 IEEE International Conference on Electronics, Computing and Communication Technologies, CONECCT 2018
CountryIndia
CityBangalore
Period16/03/1817/03/18

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    Kushwaha, P., Agarwal, H., Dabhi, C. K., Lin, Y. K., Duarte, J. P., Hu, C-M., & Chauhan, Y. S. (2018). A Unified Flicker Noise Model for FDSOI MOSFETs Including Back-bias Effect. In 2018 IEEE International Conference on Electronics, Computing and Communication Technologies, CONECCT 2018 [8482376] (2018 IEEE International Conference on Electronics, Computing and Communication Technologies, CONECCT 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CONECCT.2018.8482376