A unified compact model for electrostatic discharge protection device simulation

Hung Mu Chou*, Yen Yu Cho, Jam Wen Lee, Yiming Li

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Snapback phenomenon plays an important role for electrostatic discharge (ESD) protection design, in particular for very large scale integration (VLSI) circuits. In this paper, we proposed a unified ESD model for metal-oxide-silicon field effect transistor (MOSFET) and silicon current rectify (SCR) devices. This new model characterizes the snapback characteristics and can be directly incorporated into ESD circuit simulation for whole chip ESD protection circuit design.

Original languageEnglish
Title of host publication2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings
EditorsM. Laudon, B. Romanowicz
Pages489-492
Number of pages4
StatePublished - 2005
Event2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 - Anaheim, CA, United States
Duration: 8 May 200512 May 2005

Publication series

Name2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings

Conference

Conference2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005
CountryUnited States
CityAnaheim, CA
Period8/05/0512/05/05

Keywords

  • Circuit simulation
  • Compact model
  • ESD protection
  • MOSFET
  • SCR
  • Snapback
  • Whole chip design

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