A unified behavior model of low noise amplifier for system-level simulation

Chih De Hung*, Wen Shen Wuen, Mei Fen Chou, Kuei Ann Wen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

This paper presents a unified RF behavior model that simultaneously predicts the effects of noise, nonlinearity, impedance matching and frequency response and that enables efficient and accurate system simulation. The proposed modeling approach allows characterizing the RF effects incrementally to reduce iteration. A Verilog-A behavior model for an ultra-wideband CMOS low noise amplifier is developed for fast and accurate system simulation. The system simulation results show that the behavior model agrees well with the transistorlevel circuit with RMS error less than 0.79%. Ultimately, 87% reduction of simulation time is achieved.

Original languageEnglish
Title of host publicationProceedings of the 9th European Conference on Wireless Technology, ECWT 2006
PublisherIEEE Computer Society
Pages139-142
Number of pages4
ISBN (Print)2960055152, 9782960055153
DOIs
StatePublished - 1 Jan 2006
Event9th European Conference on Wireless Technology, ECWT 2006 - Manchester, United Kingdom
Duration: 10 Sep 200612 Sep 2006

Publication series

NameProceedings of the 9th European Conference on Wireless Technology, ECWT 2006

Conference

Conference9th European Conference on Wireless Technology, ECWT 2006
CountryUnited Kingdom
CityManchester
Period10/09/0612/09/06

Keywords

  • Low noise amplifier
  • RF behavior model

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