A unified approach to the theory of double injection in solids with traps uniformly and non-uniformly distributed in the energy band gap

Wei Hwang; K. C. Kao

doi:10.1016/0038-1101(73)90015-4

A unified approach to the theory of double injection in solids with traps uniformly and non-uniformly distributed in the energy band gap

Wei Hwang^*, K. C. Kao

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A unified theoretical approach is presented for the double injection current-voltage characteristics of a solid with traps uniformly and non-uniformly distributed in the energy band gap. The current-voltage characteristics for various forms of trap distribution functions have been computed for a typical wide-gap semiconductor, and these are discussed in the light of presently available results.

Original language	English
Pages (from-to)	407-415
Number of pages	9
Journal	Solid State Electronics
Volume	16
Issue number	3
DOIs	https://doi.org/10.1016/0038-1101(73)90015-4
State	Published - 1 Jan 1973

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abstract = "A unified theoretical approach is presented for the double injection current-voltage characteristics of a solid with traps uniformly and non-uniformly distributed in the energy band gap. The current-voltage characteristics for various forms of trap distribution functions have been computed for a typical wide-gap semiconductor, and these are discussed in the light of presently available results.",

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AU - Kao, K. C.

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N2 - A unified theoretical approach is presented for the double injection current-voltage characteristics of a solid with traps uniformly and non-uniformly distributed in the energy band gap. The current-voltage characteristics for various forms of trap distribution functions have been computed for a typical wide-gap semiconductor, and these are discussed in the light of presently available results.

AB - A unified theoretical approach is presented for the double injection current-voltage characteristics of a solid with traps uniformly and non-uniformly distributed in the energy band gap. The current-voltage characteristics for various forms of trap distribution functions have been computed for a typical wide-gap semiconductor, and these are discussed in the light of presently available results.

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IS - 3

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A unified approach to the theory of double injection in solids with traps uniformly and non-uniformly distributed in the energy band gap

Abstract

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