A two-step electrical degradation behavior in α-InGaZnO thin-film transistor

Tung Ming Pan, Fa Hsyang Chen, Ching Hung Chen, Ching Chang Lin, Chieh Cheng, Fu-Hsiang Ko, Wu Hsiung Lin, Po Hsueh Chen, Jim Long Her, Yasuhiro H. Matsud

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Abstract

In this study, we explored the threshold voltage instability behavior in amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT). A tow-step electrical degradation behavior of α-IGZO TFT was found under gate-bias stress. A usual small positive shift followed by a special negative shift of threshold voltage is characterized in the α-IGZO TFT. We suggest that the positive shift of the threshold voltage is because of charge trapping in the gate dielectric and/or at the channel/dielectric interface, while the negative shift of threshold voltage may be attributed to electric field induced extra electron carriers from H2O molecules in the back channel protective layer.

Original languageEnglish
Pages (from-to)299-302
Number of pages4
JournalECS Transactions
Volume58
Issue number7
DOIs
StatePublished - 1 Jan 2013

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    Pan, T. M., Chen, F. H., Chen, C. H., Lin, C. C., Cheng, C., Ko, F-H., Lin, W. H., Chen, P. H., Her, J. L., & Matsud, Y. H. (2013). A two-step electrical degradation behavior in α-InGaZnO thin-film transistor. ECS Transactions, 58(7), 299-302. https://doi.org/10.1149/05807.0299ecst