A two-step electrical degradation behavior in α-InGaZnO thin-film transistor

Tung Ming Pan; Fa Hsyang Chen; Ching Hung Chen; Ching Chang Lin; Chieh Cheng; Fu-Hsiang Ko; Wu Hsiung Lin; Po Hsueh Chen; Jim Long Her; Yasuhiro H. Matsud

doi:10.1149/05807.0299ecst

A two-step electrical degradation behavior in α-InGaZnO thin-film transistor

Tung Ming Pan, Fa Hsyang Chen, Ching Hung Chen, Ching Chang Lin, Chieh Cheng, Fu-Hsiang Ko, Wu Hsiung Lin, Po Hsueh Chen, Jim Long Her, Yasuhiro H. Matsud

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this study, we explored the threshold voltage instability behavior in amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT). A tow-step electrical degradation behavior of α-IGZO TFT was found under gate-bias stress. A usual small positive shift followed by a special negative shift of threshold voltage is characterized in the α-IGZO TFT. We suggest that the positive shift of the threshold voltage is because of charge trapping in the gate dielectric and/or at the channel/dielectric interface, while the negative shift of threshold voltage may be attributed to electric field induced extra electron carriers from H₂O molecules in the back channel protective layer.

Original language	English
Pages (from-to)	299-302
Number of pages	4
Journal	ECS Transactions
Volume	58
Issue number	7
DOIs	https://doi.org/10.1149/05807.0299ecst
State	Published - 1 Jan 2013

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title = "A two-step electrical degradation behavior in α-InGaZnO thin-film transistor",

abstract = "In this study, we explored the threshold voltage instability behavior in amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT). A tow-step electrical degradation behavior of α-IGZO TFT was found under gate-bias stress. A usual small positive shift followed by a special negative shift of threshold voltage is characterized in the α-IGZO TFT. We suggest that the positive shift of the threshold voltage is because of charge trapping in the gate dielectric and/or at the channel/dielectric interface, while the negative shift of threshold voltage may be attributed to electric field induced extra electron carriers from H2O molecules in the back channel protective layer.",

author = "Pan, {Tung Ming} and Chen, {Fa Hsyang} and Chen, {Ching Hung} and Lin, {Ching Chang} and Chieh Cheng and Fu-Hsiang Ko and Lin, {Wu Hsiung} and Chen, {Po Hsueh} and Her, {Jim Long} and Matsud, {Yasuhiro H.}",

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publisher = "Electrochemical Society, Inc.",

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A two-step electrical degradation behavior in α-InGaZnO thin-film transistor. / Pan, Tung Ming; Chen, Fa Hsyang; Chen, Ching Hung; Lin, Ching Chang; Cheng, Chieh; Ko, Fu-Hsiang; Lin, Wu Hsiung; Chen, Po Hsueh; Her, Jim Long; Matsud, Yasuhiro H.

In: ECS Transactions, Vol. 58, No. 7, 01.01.2013, p. 299-302.

Research output: Contribution to journal › Article › peer-review

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AU - Pan, Tung Ming

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AU - Chen, Ching Hung

AU - Lin, Ching Chang

AU - Cheng, Chieh

AU - Ko, Fu-Hsiang

AU - Lin, Wu Hsiung

AU - Chen, Po Hsueh

AU - Her, Jim Long

AU - Matsud, Yasuhiro H.

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