A two-step electrical degradation behavior in α-InGaZnO thin-film transistor

Tung Ming Pan; Fa Hsyang Chen; Ching Hung Chen; Ching Chang Lin; Chieh Cheng; Fu-Hsiang Ko; Wu Hsiung Lin; Po Hsueh Chen; Jim Long Her; Yasuhiro H. Matsud

doi:10.1149/05807.0299ecst

A two-step electrical degradation behavior in α-InGaZnO thin-film transistor

Tung Ming Pan, Fa Hsyang Chen, Ching Hung Chen, Ching Chang Lin, Chieh Cheng, Fu-Hsiang Ko, Wu Hsiung Lin, Po Hsueh Chen, Jim Long Her, Yasuhiro H. Matsud

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1 Scopus citations

Abstract

In this study, we explored the threshold voltage instability behavior in amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT). A tow-step electrical degradation behavior of α-IGZO TFT was found under gate-bias stress. A usual small positive shift followed by a special negative shift of threshold voltage is characterized in the α-IGZO TFT. We suggest that the positive shift of the threshold voltage is because of charge trapping in the gate dielectric and/or at the channel/dielectric interface, while the negative shift of threshold voltage may be attributed to electric field induced extra electron carriers from H₂O molecules in the back channel protective layer.

Original language	English
Pages (from-to)	299-302
Number of pages	4
Journal	ECS Transactions
Volume	58
Issue number	7
DOIs	https://doi.org/10.1149/05807.0299ecst
State	Published - 1 Jan 2013

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Pan, T. M., Chen, F. H., Chen, C. H., Lin, C. C., Cheng, C., Ko, F-H., Lin, W. H., Chen, P. H., Her, J. L., & Matsud, Y. H. (2013). A two-step electrical degradation behavior in α-InGaZnO thin-film transistor. ECS Transactions, 58(7), 299-302. https://doi.org/10.1149/05807.0299ecst

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abstract = "In this study, we explored the threshold voltage instability behavior in amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT). A tow-step electrical degradation behavior of α-IGZO TFT was found under gate-bias stress. A usual small positive shift followed by a special negative shift of threshold voltage is characterized in the α-IGZO TFT. We suggest that the positive shift of the threshold voltage is because of charge trapping in the gate dielectric and/or at the channel/dielectric interface, while the negative shift of threshold voltage may be attributed to electric field induced extra electron carriers from H2O molecules in the back channel protective layer.",

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AU - Pan, Tung Ming

AU - Chen, Fa Hsyang

AU - Chen, Ching Hung

AU - Lin, Ching Chang

AU - Cheng, Chieh

AU - Ko, Fu-Hsiang

AU - Lin, Wu Hsiung

AU - Chen, Po Hsueh

AU - Her, Jim Long

AU - Matsud, Yasuhiro H.

PY - 2013/1/1

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