A two-dimensional quantum transport simulation of nanoscale double-gate MOSFETs using parallel adaptive technique

Yi-Ming Li*, Shao Ming Yu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

In this paper we apply a parallel adaptive solution algorithm to simulate nanoscale double-gate metal-oxide-semiconductor field effect transistors (MOSEETs) on a personal computer (PC)-based Linux cluster with the message passing interface (MPI) libraries. Based on a posteriori error estimation, the triangular mesh generation, the adaptive finite volume method, the monotone iterative method, and the parallel domain decomposition algorithm, a set of two-dimensional quantum correction hydrodynamic (HD) equations is solved numerically on our constructed cluster system. This parallel adaptive simulation methodology with 1-irregular mesh was successfully developed and applied to deep-submicron semiconductor device simulation in our recent work. A 10 nm n-type double-gate MOSFET is simulated with the developed parallel adaptive simulator. In terms of physical quantities and refined adaptive mesh, simulation results demonstrate very good accuracy and computational efficiency. Benchmark results, such as load-balancing, speedup, and parallel efficiency are achieved and exhibit excellent parallel performance. On a 16 nodes PC-based Linux cluster, the maximum difference among CPUs is less than 6%. A 12.8 times speedup and 80% parallel efficiency are simultaneously attained with respect to different simulation cases.

Original languageEnglish
Pages (from-to)1751-1758
Number of pages8
JournalIEICE Transactions on Information and Systems
VolumeE87-D
Issue number7
StatePublished - Jul 2004

Keywords

  • Adaptive computational method
  • Demain decomposition
  • Double-gate MOSFETs
  • Nanoscale device
  • Parallel algorithm
  • Quantum correction model
  • Semiconductor device simulation

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