A tunable and program-erasable capacitor on Si with excellent tuning memory

C. H. Lai*, C. F. Lee, Albert Chin, C. Zhu, M. F. Li, S. P. McAlister, D. L. Kwong

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

6 Scopus citations

Abstract

A novel tunable and program-erasable high-κ AIN MIS capacitor is demonstrated for the first time with excellent tuning memory, which is useful to tune the impedance mismatching and resonance frequency without always connected voltage bias circuit. Large C max/C min tunability of 12 is obtained due to the high-κ AIN dielectric with high 5 πF/πm 2 capacitance density. Good tuning memory is evidenced from the small V th variation after program or erase at +4 V or -4 V for 10,000 s and the potential of years long extrapolated memory time.

Original languageEnglish
Pages259-262
Number of pages4
StatePublished - 20 Sep 2004
EventDigest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Fort Worth, TX, United States
Duration: 6 Jun 20048 Jun 2004

Conference

ConferenceDigest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
CountryUnited States
CityFort Worth, TX
Period6/06/048/06/04

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