A three stage, fully differential 128-157 GHz CMOS amplifier with wide band matching

Zhiwei Xu*, Qun Jane Gu, Mau-Chung Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

30 Scopus citations

Abstract

A fully differential amplifier has been realized in 65 nm CMOS technology, which has demonstrated 20 dB peak gain, over 10 dB gain from 128-157 GHz, and 40 GHz positive gain range from 126 to 166 GHz. By using cascode architecture with high bulk voltage tied to the cascode devices in deep-Nwell, the amplifier ensures stability and can use 2 V supply reliably. By inserting a φ-matching network between cascode devices, it broadens the amplifier working range. This amplifier occupies 0.05 rm mm2 chip area, delivers over 5 dBm output power, and consumes 51 mA from a 2 V supply. To the authors' best knowledge, this amplifier achieves the highest gain for CMOS amplifier beyond 100 GHz.

Original languageEnglish
Article number5997298
Pages (from-to)550-552
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume21
Issue number10
DOIs
StatePublished - 1 Oct 2011

Keywords

  • Cascode amplifier
  • CMOS
  • D-band
  • output PdB
  • PAE

Fingerprint Dive into the research topics of 'A three stage, fully differential 128-157 GHz CMOS amplifier with wide band matching'. Together they form a unique fingerprint.

  • Cite this