A three-dimensional simulation of electrostatic characteristics for carbon nanotube array field effect transistors

Yiming Li*, Hung Mu Chou, Jam Wem Lee, Bo Shian Lee

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

10 Scopus citations

Abstract

We, in this paper, study the electrostatic characteristics and the gate capacitances for carbon nanotube (CNT) array field effect transistors (FETs). The explored CNT-array FET is with three configurations of gate electrode, the top gate, the wrap around gate, and the bottom gate. Taking the pitch distance of structures and the gate length of CNT FET into consideration, a three-dimensional (3D) electrostatic simulation are performed by using an adaptive finite volume method, where different gate capacitance are calculated and compared. It is found that there is at least a 20% difference in calculating the gate capacitance between the 2D and 3D modeling and simulations. Our 3D simulation shows that a wrap around gate gives the largest gate capacitance among structures. A bottom gate possesses the weakest gate controllability. Effects of the pitch distance and the gate length on the gate capacitances of CNT-array FET are investigated. Results of the 3D electrostatic simulations can be applied to estimate the magnitude of the on-current of CNT FETs.

Original languageEnglish
Pages (from-to)434-440
Number of pages7
JournalMicroelectronic Engineering
Volume81
Issue number2-4
DOIs
StatePublished - Aug 2005
EventThe Proceedings of the 2nd International Symposium on Nano- and Giga-Challenges in Microelectronics -
Duration: 12 Sep 200417 Sep 2004

Keywords

  • 3D Modeling
  • Bottom gate
  • Carbon nanotube array
  • Computer simulation
  • Electrostatic potential
  • Field effect transistor
  • Gate capacitance
  • Top gate
  • Warp around gate

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