A temperature accelerated model for high state retention loss of nitride storage flash memory

M. Y. Lee*, N. K. Zous, Trista Huang, W. J. Tsai, Albert Kuo, Ta-Hui Wang, Shaw Yin, Chih Yuan Lu

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

2 Scopus citations

Abstract

A temperate accelerating model, which bases on the tunneling out of the thermally emitted electrons in the nitride layer via traps at the bottom oxide, is proposed to explain the retention loss behavior of high VT states at MXVAND products with respect to bake temperature, bake time, and cycling numbers. The model parameters can be easily extracted and the fitting results show an acceptable accuracy. According to this model, the retention loss should follow a straight line on a semi-log scale and the slope is proportional to the temperature. Besides, the cycling number dependence is successfully reproduced by considering the erase degradation and the growth rate of oxide traps.

Original languageEnglish
Pages11-14
Number of pages4
StatePublished - 1 Dec 2004
Event2004 IEEE International Integrated Reliability Workshop Final Report - S. Lake Tahoe, CA, United States
Duration: 18 Oct 200421 Oct 2004

Conference

Conference2004 IEEE International Integrated Reliability Workshop Final Report
CountryUnited States
CityS. Lake Tahoe, CA
Period18/10/0421/10/04

Fingerprint Dive into the research topics of 'A temperature accelerated model for high state retention loss of nitride storage flash memory'. Together they form a unique fingerprint.

Cite this