A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation

Nan Wu*, Qingchun Zhang, Chunxiang Zhu, D. S.H. Chan, Anyan Du, N. Balasubramanian, M. F. Li, Albert Chin, Johnny K.O. Sin, D. L. Kwong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

119 Scopus citations


In this letter, we demonstrate a novel surface passivation process for HfO2 Ge pMOSFETs using SiH4 surface annealing prior to HfO2 deposition. By using SiH4 passivation, a uniform amorphous interfacial layer is formed after device fabrication. Electrical results show that the HfO2 Ge MOSFET with Si-passivation exhibits less frequency dispersion, narrower gate leakage current distribution, and a ∼ 140% higher peak mobility than that of the device with surface nitridation.

Original languageEnglish
Pages (from-to)631-633
Number of pages3
JournalIEEE Electron Device Letters
Issue number9
StatePublished - 1 Sep 2004

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