A surface-silylated single-layer resist using chemical amplification for deep ultraviolet lithography: II. Limited permeation of Si compounds from liquid phase

Kow-Ming Chang, Ming Hau Tseng, I. Chung Deng, Yao Pin Tsai, Sy Jer Yeh

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

A single thick layer of poly(vinyl phenol) containing onium salt was surface-silylated uniformly through contact with hexamethyl-cyclotrisilazane or hexamethyl-disilazane in solution to obtain a bilevel structure, similarly to a previous silylation study in the vapor phase. Silicon atoms were effectively incorporated into the surface sublayer by limited permeation of the solute and reaction with -OH to form -O-SiR3. The O2 reactive ion etching (RIE) durability of the silylated sublayer of 170-220 nm thickness was 15-38 times as high as that of the unsilylated bulk layer. The resist layer was patterned by 5-10 mJ/cm2 deep ultraviolet exposure, chemically amplified desilylation during postexposure baking, and wet development with alkali to remove the surface sublayer in the exposed area, forming a shallow, recessed image. When the layer, particularly that silylated with hexamethyl-disilazane, was plasma-developed by O2 RIE, the bulk layer in the exposed area was clearly blanked to the substrate to give a positive-tone image with a high aspect ratio.

Original languageEnglish
Pages (from-to)6658-6662
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number11
StatePublished - 1 Nov 2001

Keywords

  • Alkaline development
  • Bilevel structure
  • Plasma blanking
  • Positive image
  • Pre-exposure silylation
  • Top surface imaging

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