A subthreshold SRAM with embedded data-aware write-assist and adaptive data-aware keeper

Yi Wei Chiu, Yu Hao Hu, Jun Kai Zhao, Shyh-Jye Jou, Ching Te Chuang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

We propose a data-aware power cut-off write-assist 12T SRAM cell (DPC12T) which improves the write-ability to improve the write minimum operating voltage (VMIN). Moreover, we propose an adaptive data-aware keeper (DAK) to lower the design conflicts among the keeper current, read current and the bit-line leakage current to improve the read stability and read VMIN for single-ended read operation. Fabricated 40nm 8kb test chip macro with 64 cells per bit-line can achieve VMIN 250 mV and 230 mV without and with enabling DAK at 6 MHz and 4 MHz, respectively. The SRAM test macro with 256, 512 and 1024 cells per bit-line demonstrates that DAK improves the read VMIN by 9% to 21% at low supply voltages.

Original languageEnglish
Title of host publicationISCAS 2016 - IEEE International Symposium on Circuits and Systems
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1014-1017
Number of pages4
ISBN (Electronic)9781479953400
DOIs
StatePublished - 29 Jul 2016
Event2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016 - Montreal, Canada
Duration: 22 May 201625 May 2016

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
Volume2016-July
ISSN (Print)0271-4310

Conference

Conference2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016
CountryCanada
CityMontreal
Period22/05/1625/05/16

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