A Subthreshold Model of the Narrow-Gate Effect in MOSFET's

Steve S. Chung, Chih Tang Sah

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The subthreshold softening characteristic of MOSFET's due to the narrow-gate effect has been investigated based on the two-dimensional (2-D) numerical solution of the Poisson equation and device physics. Numerical results taken on stepped-oxide MOSFET's with different gate widths show that a narrower gate width device tends to give higher cut-off voltage. Two parameters account for the softening of the subthreshold characteristics; the subthreshold slope of the drain conductance-gate voltage characteristic and the effective channel width-Both parameters can be extracted easily from the theoretical 2-D computed or experimental drain conductance-gate voltage characteristics. A two-parameter analytical approximation formula for narrow-gate MOSFETs operating in the subthreshold range is thus proposed and tested against exact 2-D numerical results, showing good accuracy. This model is the first one ever reported.

Original languageEnglish
Pages (from-to)2521-2529
Number of pages9
JournalIEEE Transactions on Electron Devices
VolumeED-34
Issue number12
DOIs
StatePublished - 1 Dec 1987

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