A study on the radiation hardness of flash cell with horn-shaped floating-gate

Tiao Yuan Huang*, Fuh Cheng Jong, Tien-Sheng Chao, Horng-Chih Lin, Len Yi Leu, Konrad Young, Chen Hsi Lin, Kuang Y. Chiu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The effects of radiation on the characteristics of split-gate electrical erasable programmable read only memory (EEPROM)/flash cells with recently-proposed horn-shaped floating gates are studied in terms of cell read current, data retention, cycling endurance, program/erase efficiency, threshold voltage and junction leakage. Our results show that the cells appear to survive after 1 Mrad (Si) Co 60 irradiation. Moreover, the after-irradiation cell read current actually increases in the "erase" (i.e., low-threshold voltage, high-conducting) state (i.e., improves), albeit the cell read current also increases in the "program" (i.e., high-threshold voltage, low-conducting) state (i.e., a degradation). Our results also show that, despite an improvement in the initial read current in the "erase" state immediately after radiation, the write/erase cycling endurance of the flash cells is significantly impeded after irradiation, due to a much faster "window closure" rate in the "erase" state, although the cell read current is found to remain relatively stable in the "program" state after cycling.

Original languageEnglish
Pages (from-to)5459-5463
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume36
Issue number9 A
DOIs
StatePublished - 1 Sep 1997

Keywords

  • EEPROM
  • Flash cell
  • Horn-shaped floating gate
  • Non-volatile memory
  • Rad-hard
  • Radiation effects

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