A study on the erase and retention mechanisms for MONOS, MANOS, and BE-SONOS non-volatile memory devices

Sheng Chih Lai*, Hang Ting Lue, Jung Yu Hsieh, Ming Jui Yang, Yan Kai Chiou, Chia Wei Wu, Tai Bor Wu, Guang Li Luo, Chao-Hsin Chien, Erh Kun Lai, Kuang Yeu Hsieh, Rich Liu, Chih Yuan Lu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

The erase and retention characteristics of MONOS, MANOS [1] and BE-SONOS [2] devices are examined in detail in order to determine their mechanisms. The erase transient current (J) is extracted and plotted against the tunnel oxide electric field (E TUN ). Our results show that the erase speed ranking is BE-SONOS > MANOS > MONOS. The difference in erase speed comes from the different erase mechanisms of these devices. The retention characteristics are also compared and discussed.

Original languageEnglish
Title of host publication2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers
DOIs
StatePublished - 26 Sep 2007
Event2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, Taiwan
Duration: 23 Apr 200725 Apr 2007

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
CountryTaiwan
CityHsinchu
Period23/04/0725/04/07

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