A study on poly-Si thin-film transistor (TFT) SONOS memory cells with source/drain engineering

Bing-Yue Tsui*, Jui Yao Lai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Poly-Si thin-film transistor SONOS memory cells with various source/drain junctions are studied comprehensively. For pure Schottky-barrier junction, the overlap between source/drain and gate is critical. A 2-nm underlap results in high tunneling resistance and thus poor programming efficiency. Suitable designed modified-Schottky-barrier junction can improve programming speed by Fowler-Nordheim tunneling while keeping erase and retention performance unaltered. The main degradation mechanism during endurance test is attributed to interface state generation and tunneling layer degradation. After improving the quality of the tunneling layer, the modified Schottky barrier junction would be a promising choice for 3-dimentional poly-Si memory.

Original languageEnglish
Title of host publicationESSDERC 2011 - Proceedings of the 41st European Solid-State Device Research Conference
Pages199-202
Number of pages4
DOIs
StatePublished - 12 Dec 2011
Event41st European Solid-State Device Research Conference, ESSDERC 2011 - Helsinki, Finland
Duration: 12 Sep 201116 Sep 2011

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference41st European Solid-State Device Research Conference, ESSDERC 2011
CountryFinland
CityHelsinki
Period12/09/1116/09/11

Fingerprint Dive into the research topics of 'A study on poly-Si thin-film transistor (TFT) SONOS memory cells with source/drain engineering'. Together they form a unique fingerprint.

  • Cite this

    Tsui, B-Y., & Lai, J. Y. (2011). A study on poly-Si thin-film transistor (TFT) SONOS memory cells with source/drain engineering. In ESSDERC 2011 - Proceedings of the 41st European Solid-State Device Research Conference (pp. 199-202). [6044200] (European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2011.6044200