A study on low temperature transport properties of independent double-gated poly-Si nanowire transistors

Wei Chen Chen*, Horng-Chih Lin, Zer Ming Lin, Chin Tsai Hsu, Tiao Yuan Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Employing mix-and-match lithography of I-line stepper and e-beam direct writing, independent double-gated poly-Si nanowire thin film transistors with channel lengths ranging from 70 nm to 5 μm were fabricated and characterized. Electrical measurements performed under cryogenic ambient displayed intriguing characteristics in terms of length dependent abrupt switching behavior for one of the single-gated modes. Through simulation and experimental verification, the root cause for this phenomenon was identified to be the non-uniformly distributed dopants introduced by ion implantation.

Original languageEnglish
Article number435201
JournalNanotechnology
Volume21
Issue number43
DOIs
StatePublished - 29 Oct 2010

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