A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO 2/Pt nonvolatile memory with 1T1R architecture

Ming Chi Wu*, Wen Yueh Jang, Chen Hsi Lin, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

63 Scopus citations

Abstract

Low-power, bipolar resistive switching (RS) characteristics in the Ti/ZrO 2/Pt nonvolatile memory with one transistor and one resistor (1T1R) architecture were reported. Multilevel storage behavior was observed by modulating the amplitude of the MOSFET gate voltage, in which the transistor functions as a current limiter. Furthermore, multilevel storage was also executed by controlling the reset voltage, leading the resistive random access memory (RRAM) to the multiple metastable low resistance state (LRS). The experimental results on the measured electrical properties of the various sized devices confirm that the RS mechanism of the Ti/ZrO 2/Pt structure obeys the conducting filaments model. In application, the devices exhibit high-speed switching performances (250 ns) with suitable high/low resistance state ratio (HRS/LRS > 10). The LRS of the devices with 10 year retention ability at 80 °C, based on the Arrhenius equation, is also demonstrated in the thermal accelerating test. Furthermore, the ramping gate voltage method with fixed drain voltage is used to switch the 1T1R memory cells for upgrading the memory performances. Our experimental results suggest that the ZrO 2-based RRAM is a prospective alternative for nonvolatile multilevel memory device applications.

Original languageEnglish
Article number065010
JournalSemiconductor Science and Technology
Volume27
Issue number6
DOIs
StatePublished - 1 Jun 2012

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